vs-st110spbf series www.vishay.com vishay semiconductors revision: 11-mar-14 1 document number: 94393 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 phase control thyristors (stud version), 110 a features ?center gate ? international standard case to-209ac (to-94) ? compression bonded encapsulation for heavy duty operations such as severe thermal cycling ? hermetic glass-metal case with ceramic insulator (glass-metal seal over 1200 v) ? designed and qualified for industrial level ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 typical applications ? dc motor controls ? controlled dc power supplies ? ac controllers ? ? ? ? electrical specifications product summary i t(av) 110 a v drm /v rrm 400 v, 1600 v v tm 1.52 v i gt 150 ma t j -40 c to 140 c package to-209ac (to-94) diode variation single scr to-209ac (to-94) major ratings and characteristics parameter test conditions values units i t(av) 110 a t c 90 c i t(rms) 175 a i tsm 50 hz 2700 60 hz 2830 i 2 t 50 hz 36.4 ka 2 s 60 hz 33.2 v drm /v rrm 400 to 1600 v t q typical 100 s t j -40 to 125 c voltage ratings type number voltage code v drm /v rrm , maximum repetitive peak and off-state voltage v v rsm , maximum non-repetitive peak voltage v i drm /i rrm maximum at t j = t j maximum ma vs-st110s 04 400 500 20 08 800 900 12 1200 1300 16 1600 1700
vs-st110spbf series www.vishay.com vishay semiconductors revision: 11-mar-14 2 document number: 94393 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 absolute maximum ratings parameter symbol test conditions values units maximum average on-state current ? at case temperature i t(av) 180 conduction, half sine wave 110 a 90 c maximum rms on-state current i t(rms) dc at 85 c case temperature 175 a maximum peak, one-cycle ? non-repetitive surge current i tsm t = 10 ms no voltage reapplied sinusoidal half wave, ? initial t j = t j maximum 2700 t = 8.3 ms 2830 t = 10 ms 100 % v rrm reapplied 2270 t = 8.3 ms 2380 maximum i 2 t for fusing i 2 t t = 10 ms no voltage reapplied 36.4 ka 2 s t = 8.3 ms 33.2 t = 10 ms 100 % v rrm ? reapplied 25.8 t = 8.3 ms 23.5 maximum i 2 ? t for fusing i 2 ? t t = 0.1 to 10 ms, no voltage reapplied 364 ka 2 ? s low level value of threshold voltage v t(to)1 (16.7 % x ? x i t(av) < i < ? x i t(av) ), t j = t j maximum 0.90 v high level value of threshold voltage v t(to)2 (i > ? x i t(av) ), t j = t j maximum 0.92 low level value of on-state slope resistance r t1 (16.7 % x ? x i t(av) < i < ? x i t(av) ), t j = t j maximum 1.79 m ? high level value of on-state slope resistance r t2 (i > ? x i t(av) ), t j = t j maximum 1.81 maximum on-state voltage v tm i pk = 350 a, t j = t j maximum, t p = 10 ms sine pulse 1.52 v maximum holding current i h t j = 25 c, anode supply 12 v resistive load 600 ma typical latchi ng current i l 1000 switching parameter symbol test conditions values units maximum non-repe titive rate of ? rise of turned-on current di/dt gate drive 20 v, 20 ? , t r ? 1 s ? t j = t j maximum, anode voltage ? 80 % v drm 500 a/s typical delay time t d gate current 1 a, di g /dt = 1 a/s ? v d = 0.67 % v drm , t j = 25 c 2.0 s typical turn-off time t q i tm = 100 a, t j = t j maximum, di/dt = 10 a/s, ? v r = 50 v, dv/dt = 20 v/s, gate 0 v 100 ? , t p = 500 s 100 blocking parameter symbol test conditions values units maximum critical rate of rise of ? off-state voltage dv/dt t j = t j maximum linear to 80 % rated v drm 500 v/s maximum peak reverse and ? off-state leakage current i rrm , i drm t j = t j maximum, rated v drm /v rrm applied 20 ma
vs-st110spbf series www.vishay.com vishay semiconductors revision: 11-mar-14 3 document number: 94393 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note ? the table above shows the increment of thermal resistance r thjc when devices operate at different conduction angles than dc ? ? triggering parameter symbol test conditions values units typ. max. maximum peak gate power p gm t j = t j maximum, t p ? 5 ms 5 w maximum average gate power p g(av) t j = t j maximum, f = 50 hz, d% = 50 1 maximum peak positi ve gate current i gm t j = t j maximum, t p ? 5 ms 2.0 a maximum peak positive gate voltage + v gm 20 v maximum peak negative gate voltage - v gm 5.0 dc gate current required to trigger i gt t j = -40 c maximum required gate trigger/ current/voltage are the lowest value which will trigger all units 6 v anode to cathode applied 180 - ma t j = 25 c 90 150 t j = 125 c 40 - dc gate voltage required to trigger v gt t j = -40 c 2.9 - v t j = 25 c 1.8 3.0 t j = 125 c 1.2 - dc gate current not to trigger i gd t j = t j maximum maximum gate current/voltage not to trigger is the maximum value which will not trigger any unit with rated v drm anode to cathode applied 10 ma dc gate voltage not to trigger v gd 0.25 v thermal and mechanical specifications parameter symbol test conditions values units maximum operating junction ? temperature range t j -40 to 125 c maximum storage temperature range t stg -40 to 150 maximum thermal resistance, ? junction to case r thjc dc operation 0.195 k/w maximum thermal resistance, ? case to heatsink r thcs mounting surface, smooth, flat and greased 0.08 mounting torque, 10 % non-lubricated threads 15.5 (137) nm (lbf in) lubricated threads 14 (120) approximate weight 130 g case style see di mensions - link at the end of datasheet to-209ac (to-94) ? r thjc conduction conduction angle sinusoidal conduction rectangular conduction test conditions units 180 0.035 0.025 t j = t j maximum k/w 120 0.041 0.042 90 0.052 0.056 60 0.076 0.079 30 0.126 0.127
vs-st110spbf series www.vishay.com vishay semiconductors revision: 11-mar-14 4 document number: 94393 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - current ratings ch aracteristics fig. 2 - current ratings characteristics fig. 3 - on-state powe r loss characteristics fig. 4 - on-state powe r loss characteristics 80 90 100 110 120 130 0 20406080100120 maximum allowable case temperature (c) 30 60 90 120 180 average on-state current (a) conduction angle st110s series r (dc) = 0.195 k/w thjc 80 90 100 110 120 130 0 20 40 60 80 100 120 140 160 180 dc 30 60 90 120 180 average on-state current (a) maximum allowable case temperature (c) conduction period st110s series r (dc) = 1.95 k/w thjc 25 50 75 100 125 maximum allowable ambient temperature (c) r = 0 . 1 k / w - d e l t a r 0 . 2 k / w 0 . 3 k / w 0 . 4 k / w 0 . 5 k / w 0 . 6 k / w 1 k / w 0 . 8 k / w 1 . 2 k / w t h s a 0 20 40 60 80 100 120 140 160 020406080100120 180 120 90 60 30 rms limit conduction angle maximum average on-state power loss (w) average on-state current (a) st110s series t = 125c j 25 50 75 100 125 maximum allowable ambient temperature (c) r = 0 . 1 k/ w - d e l t a r t h s a 0 . 2 k / w 0 . 3 k / w 0 . 4 k / w 0 . 6 k / w 0 . 8 k / w 1 k / w 0 . 5 k / w 1 . 2 k / w 0 20 40 60 80 100 120 140 160 180 200 220 0 20 40 60 80 100 120 140 160 180 dc 180 120 90 60 30 rms limit conduction period maximum average on-state power loss (w) average on-state current (a) st110s series t = 125c j
vs-st110spbf series www.vishay.com vishay semiconductors revision: 11-mar-14 5 document number: 94393 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - maximum non-repetitive surge current fig. 6 - maximu m non-repetitive surge current fig. 7 - on-state volt age drop characteristics fig. 8 - thermal impedance z thjc characteristic 1000 1200 1400 1600 1800 2000 2200 2400 110100 number of equal amplitude half cycle current pulses (n) peak half sine wave on-state current (a) initial t = 125c @ 60 hz 0.0083 s @ 50 hz 0.0100 s st110s series j at any rated load condition and with rated v applied following surge. rrm 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 0.01 0.1 1 10 pulse train duration (s) maximum non repetitive surge current versus pulse train duration. control of conduction may not be maintained. peak half sine wave on-state current (a) initial t = 125c no voltage reapplied rated v reapplied j rrm st110s series instantaneous on-state voltage (v) instantaneous on-state current (a) 10 100 1000 10000 0.5 1.5 2.5 3.5 4.5 tj = 25?c tj = 125?c st110s series 0.001 0.01 0.1 1 0.001 0.01 0.1 1 10 square wave pulse duration (s) thjc transient thermal impedance z (k/w) st110s series steady state value r = 0.195 k/w (dc operation) thjc
vs-st110spbf series www.vishay.com vishay semiconductors revision: 11-mar-14 6 document number: 94393 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 9 - gate characteristics ordering information table links to related documents dimensions www.vishay.com/doc?95078 0.1 1 10 100 0.001 0.01 0.1 1 10 100 vgd igd (b) (a) tj=25 c tj=125 c tj=-40 c (1) (2) (3) instantaneous gate current (a) instantaneous gate voltage (v) a) recommended load line for b) recommended load line for <=30% rated di/dt : 10v, 10ohms frequency limited by pg(av) rated di/dt : 20v, 10ohms; tr<=1 s tr<=1 s (1) pgm = 10w, tp = 4ms (2) pgm = 20w, tp = 2ms (3) pgm = 40w, tp = 1ms (4) pgm = 60w, tp = 0.66ms device: st110s series rectangular gate pulse (4) - thyristor 2 - essential part marking 3 - 0 = converter grade 4 11 10 - s = compression bonding stud 8 - v = glass-metal seal (only up to 1200 v) 5 - voltage code x 100 = v rrm (see voltage ratings table) 6 - p = stud base 20unf threads 7 - 0 = eyelet terminals (gate and auxiliary cathode leads) 1 = fast-on terminals (gate and auxiliary cathode leads) 2 = flag terminals (for cathode and gate terminals) 9 - critical dv/dt: none = ceramic housing (over 1200 v) none = 500 v/s (standard value) l = 1000 v/s (special selection) device code 5 1 3 2 4 6 7 8 9 10 11 st vs- 11 0 s 16 p 0 v l pbf 1 - vishay semiconductors product - none = standard production - pbf = lead (pb)-free
document number: 95078 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 23-sep-08 1 to-209ac (to-94) for st110s series outline dimensions vishay semiconductors dimensions in millimeters (inches) fast-on terminals c.s. 0.4 mm 2 white shrink red shrink red cathode red silicon rubber ? 4.3 (0.17) 12.5 (0.49) max. (0.0006 s.i.) glass metal seal ? 8.5 (0.33) 16.5 (0.65) max. ? 23.5 (0.93) max. c.s. 16 mm 2 (0.025 s.i.) flexible lead 2.6 (0.10) max. 29.5 (1.16) max. 1/2"-20unf-2a sw 27 9.5 (0.37 ) min. white gate amp. 280000-1 ref-250 20 (0.79) min. 29 (1.14) max. 21 (0.83) max. 157 (6.18) 170 (6.69) 70 (2.75) min. 215 10 (8.46 0.39)
www.vishay.com for technical questions, contact: indmodules@vishay.com document number: 95078 2 revision: 23-sep-08 outline dimensions vishay semiconductors to-209ac (to-94) fo r st110s series dimensions in millimeters (inches) ceramic housing 1/2"-20unf-2a sw 27 red shrink red cathode red silicon rubber 12.5 (0.49) max. 29 (1.14) max. 21 (0.83) max. 157 (6.18) 170 (6.69) 70 (2.75) min. ? 4.3 (0.17) ? 8.5 (0.33) 16.5 (0.65) max. 29.5 (1.16) max. c.s. 0.4 mm 2 white shrink (0.0006 s.i.) ? 22.5 (0.88) max. white gate 215 10 (8.46 0.39) c.s. 16 mm 2 (0.025 s.i.) flexible lead 2.6 (0.10) max. 9.5 (0.37) min. 20 (0.79) min.
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